Amorphous gallium oxide grown by low-temperature PECVD
نویسندگان
چکیده
منابع مشابه
Experimental and theoretical study of amorphous silicon roughness evolution grown by low-temperature PECVD
Using real-time spectroscopic ellipsometry (RTSE) the evolution of the surface roughness in aSi:H thin-films grown by low-temperature plasma-enhanced chemical vapor deposition (PECVD) has been studied as a function of the hydrogen dilution ratio Rd =[H2]/[SiH4] with 15 ≤ Rd ≤ 60. To describe the roughness evolution, we have used a 3D linearized continuum equation which includes a negative surfa...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 2018
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.5018800